Part No:
BUV298V
Category:
Transistors
Description:
NPN 150°C TJ 1 Elements 4 Terminations SILICON NPN SOT-227-4, miniBLOC Tube Chassis Mount
Package:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Moisture Sensitivity Level (MSL)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Products Detail
BUV298V Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 12 @ 32A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 6.4A, 32A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 50A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 50A volts at Single BJT transistors maximum.
BUV298V Features
the DC current gain for this device is 12 @ 32A 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 1.2V @ 6.4A, 32A
the emitter base voltage is kept at 7V
the current rating of this device is 50A
BUV298V Applications
There are a lot of STMicroelectronics
BUV298V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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