BUL58D [STMicroelectronics]

BUL58D Overview

DC current gain in this device equals 5 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 1A, 5A.An emitter's base voltage can be kept at 9V to gain high efficiency.Breakdown input voltage is 450V volts.In extreme cases, the collector current can be as low as 8A volts.

BUL58D Features

the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 1A, 5A
the emitter base voltage is kept at 9V

BUL58D Applications

There are a lot of STMicroelectronics
BUL58D applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting