STB25NM60N-1 [STMicroelectronics]

STB25NM60N-1 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 850 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2400pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 94 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 84A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STB25NM60N-1 Features

the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 94 ns
based on its rated peak drain current 84A.

STB25NM60N-1 Applications

There are a lot of STMicroelectronics
STB25NM60N-1 applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.