Name: STD12NM50ND
Brand: STMicroelectronics
SKU: STD12NM50ND

STD12NM50ND [STMicroelectronics]

Part No:

STD12NM50ND

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 380m ? @ 5.5A, 10V ±25V 850pF @ 50V 30nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

-

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STD12

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Configuration

SINGLE

Power Dissipation-Max

100W Tc

Operating Mode

ENHANCEMENT MODE

Power Dissipation

100W

Case Connection

DRAIN

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

Current - Continuous Drain (Id) @ 25°C

11A Tc

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Rise Time

15ns

Drain to Source Voltage (Vdss)

500V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

17 ns

Turn-Off Delay Time

40 ns

Continuous Drain Current (ID)

11A

JEDEC-95 Code

TO-252AA

Gate to Source Voltage (Vgs)

25V

Pulsed Drain Current-Max (IDM)

44A

DS Breakdown Voltage-Min

500V

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

Description

The STD12NM50ND is a D2PAK, DPAK, TO-220FP N-channel 500 V, 0.29, 11 A, FDmeshTM II Power MOSFET (with fast diode). The MDmesh^TM properties are combined with an intrinsic fast-recovery body diode in the FDmeshTM technology. The end solution has lower on-resistance and faster switching commutations, making it ideal for bridge topologies with low trr requirements.

Features

? 100% avalanche tested

? Low gate charge and input capacitance

? Low input gate resistance

? provide greater efficiency while operating at lower voltages

? operate at lower power and draws no current

Applications

? Switching applications

? Switch

? Auto Intensity Control

? Amplifiers

? Chopper

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

No documents available

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.