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    Part number
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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. BULB39D-1 STMicroelectronics

    BULB39D-1 [STMicroelectronics]

    BULB39D-1
    BULB39D-1

    Part No:

    BULB39D-1

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    NPN 150°C TJ 100?A 1 Elements TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

    RoHS Status:

    Product FAQ

    1. Is BULB39D-1 available for RFQ?

    Yes. BULB39D-1 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for BULB39D-1?

    Pricing for BULB39D-1 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of BULB39D-1?

    BULB39D-1 is a STMicroelectronics Transistors with Packaging: Tube and Voltage - Collector Emitter Breakdown (Max): 450V and DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA 5V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for BULB39D-1?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can BULB39D-1 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to BULB39D-1?

    Yes. If BULB39D-1 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    BULB39D-1

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Contact Plating
    Tin
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Supplier Device Package
    D2PAK
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    3 (168 Hours)
    Max Operating Temperature
    150°C
    Min Operating Temperature
    -65°C
    Max Power Dissipation
    70W
    Base Part Number
    BULB39
    Number of Elements
    1
    Polarity
    NPN
    Element Configuration
    Single
    Power Dissipation
    70W
    Power - Max
    70W
    Transistor Type
    NPN
    Collector Emitter Voltage (VCEO)
    450V
    Max Collector Current
    4A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 10mA 5V
    Vce Saturation (Max) @ Ib, Ic
    1.1V @ 500mA, 2.5A
    Collector Emitter Breakdown Voltage
    450V
    Voltage - Collector Emitter Breakdown (Max)
    450V
    Current - Collector (Ic) (Max)
    4A
    Collector Base Voltage (VCBO)
    800V
    Emitter Base Voltage (VEBO)
    9V
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant

    Products Detail

    BULB39D-1 Overview


    As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.1V @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.D2PAK is the supplier device package for this product.This device displays a 450V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 4A volts.

    BULB39D-1 Features


    the DC current gain for this device is 10 @ 10mA 5V
    the vce saturation(Max) is 1.1V @ 500mA, 2.5A
    the emitter base voltage is kept at 9V
    the supplier device package of D2PAK


    BULB39D-1 Applications


    There are a lot of STMicroelectronics
    BULB39D-1 applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    BULB39D
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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