STN817A [STMicroelectronics]

STN817A Overview

This device has a DC current gain of 30 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1.5A volts is possible.

STN817A Features

the DC current gain for this device is 30 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

STN817A Applications

There are a lot of STMicroelectronics
STN817A applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting