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    1. Home/
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    3. Discrete Semiconductors/
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    5. STP23NM60ND STMicroelectronics

    STP23NM60ND [STMicroelectronics]

    STP23NM60ND
    STP23NM60ND

    Part No:

    STP23NM60ND

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 180m ? @ 10A, 10V ±25V 2100pF @ 50V 69nC @ 10V TO-220-3

    RoHS Status:

    Product FAQ

    1. Is STP23NM60ND available for RFQ?

    Yes. STP23NM60ND by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STP23NM60ND?

    Pricing for STP23NM60ND can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STP23NM60ND?

    STP23NM60ND is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 19.5A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STP23NM60ND?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STP23NM60ND be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STP23NM60ND?

    Yes. If STP23NM60ND is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STP23NM60ND

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Contact Plating
    Tin
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-220-3
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Resistance
    180mOhm
    Technology
    MOSFET (Metal Oxide)
    Base Part Number
    STP23N
    Pin Count
    3
    Number of Elements
    1
    Power Dissipation-Max
    150W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    150W
    Turn On Delay Time
    21 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    2100pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    19.5A Tc
    Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
    Rise Time
    45ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Fall Time (Typ)
    40 ns
    Turn-Off Delay Time
    90 ns
    Continuous Drain Current (ID)
    19.5A
    Threshold Voltage
    4V
    JEDEC-95 Code
    TO-220AB
    Gate to Source Voltage (Vgs)
    25V
    Drain to Source Breakdown Voltage
    600V
    Pulsed Drain Current-Max (IDM)
    78A
    Avalanche Energy Rating (Eas)
    700 mJ
    Height
    15.75mm
    Length
    10.4mm
    Width
    4.6mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STP23NM60ND   Description

     

    These FDMesh "II power MOSFET" with inherent fast recovery body diodes are produced using the second generation MDMesh technology. These revolutionary devices use a new stripe layout vertical structure with extremely low on-resistance and excellent switching performance. They are ideal for bridge topologies and ZVS phase shifters.

     


    STP23NM60ND   Features


    ? The worldwide best RDS(on) * area amongst the

    fast recovery diode devices

    ? 100% avalanche tested

    ? Low input capacitance and gate charge

    ? Low gate input resistance

    ? High dv/dt and avalanche capabilities


    STP23NM60ND    Applications


    ? Switching applications


    Documents

    Datasheets:

    STP23NM60ND-STMicroelectronics-datasheet-12522085.pdfSTP23NM60ND-STMicroelectronics-datasheet-62335171.pdfSTP23NM60ND-STMicroelectronics-datasheet-15889255.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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