STB55NF03LT4 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1265pF @ 25V.This device conducts a continuous drain current (ID) of 55A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 220A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

STB55NF03LT4 Features

a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 220A.
a threshold voltage of 1V

STB55NF03LT4 Applications

There are a lot of STMicroelectronics
STB55NF03LT4 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching