Name: STD11N60DM2
Brand: STMicroelectronics
SKU: STD11N60DM2

STD11N60DM2 [STMicroelectronics]

Part No:

STD11N60DM2

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 420m ? @ 5A, 10V ±25V 614pF @ 100V 16.5nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

17 Weeks

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STD11

Power Dissipation-Max

110W Tc

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

614pF @ 100V

Current - Continuous Drain (Id) @ 25°C

10A Tc

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD11N60DM2 Description

STD11N60DM2 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STD11N60DM2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

STD11N60DM2 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

STD11N60DM2 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display