Name: STB20N65M5
Brand: STMicroelectronics
SKU: STB20N65M5

STB20N65M5 [STMicroelectronics]

Part No:

STB20N65M5

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 190m ? @ 9A, 10V ±25V 1434pF @ 100V 36nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

17 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

190MOhm

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Base Part Number

STB20N

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

130W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1434pF @ 100V

Current - Continuous Drain (Id) @ 25°C

18A Tc

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Rise Time

7.5ns

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

7.5 ns

Continuous Drain Current (ID)

18A

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

710V

Pulsed Drain Current-Max (IDM)

72A

Avalanche Energy Rating (Eas)

270 mJ

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB20N65M5 Description

The STB20N65M5 device is N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

STB20N65M5 Features

Worldwide best R_DS(on) * area
Higher V_DSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
ROHS3 Compliant
Lead Free
No Radiation Hardening

STB20N65M5 Applications

Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx20N65M5 STB20N65M5-STMicroelectronics-datasheet-62335157.pdf STB20N65M5-STMicroelectronics-datasheet-13195471.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.