Name: STB20NM50FDT4
Brand: STMicroelectronics
SKU: STB20NM50FDT4

STB20NM50FDT4 [STMicroelectronics]

Part No:

STB20NM50FDT4

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 250m ? @ 10A, 10V ±30V 1380pF @ 25V 53nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

250mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB20N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

192W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

192W

Turn On Delay Time

22 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1380pF @ 25V

Current - Continuous Drain (Id) @ 25°C

20A Tc

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Rise Time

20ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

20A

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

80A

Avalanche Energy Rating (Eas)

700 mJ

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB20NM50FDT4 Description

The STMicroelectronics STB20NM50FDT4 is an FDmesh? Power MOSFET associating all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

STB20NM50FDT4 Features

Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
100% avalanche tested
Tight process control and high manufacturing yields

STB20NM50FDT4 Applicaitons

Switching applications

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STB20NM50FDT4-STMicroelectronics-datasheet-10837077.pdf STB20NM50FDT4-STMicroelectronics-datasheet-62335162.pdf STB20NM50FDT4-STMicroelectronics-datasheet-36412.pdf STB20NM50FDT4-STMicroelectronics-datasheet-8330597.pdf

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.