STB12NM50N [STMicroelectronics]

STB12NM50N Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 940pF @ 50V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 44A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (10V).

STB12NM50N Features

a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 44A.
a threshold voltage of 3V

STB12NM50N Applications

There are a lot of STMicroelectronics
STB12NM50N applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit