Name: STD11NM60N
Brand: STMicroelectronics
SKU: STD11NM60N

STD11NM60N [STMicroelectronics]

Part No:

STD11NM60N

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 450m ? @ 5A, 10V ±25V 850pF @ 50V 31nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) - annealed

Voltage - Rated DC

600V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

not_compliant

Current Rating

10A

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STD11

Pin Count

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Number of Elements

Power Dissipation-Max

90W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

90W

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

Current - Continuous Drain (Id) @ 25°C

10A Tc

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Rise Time

18.5ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

12 ns

Turn-Off Delay Time

50 ns

Continuous Drain Current (ID)

10A

Gate to Source Voltage (Vgs)

25V

Drain-source On Resistance-Max

0.45Ohm

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

40A

Avalanche Energy Rating (Eas)

200 mJ

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD11NM60N Description

STD11NM60N is a 600v N-channel MDmesh? II Power MOSFET. This STD11NM60N is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STD11NM60N Features

100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 600v
Total dissipation at TC = 25 °C: 90w
In the TO-252 (DPAK) package

STD11NM60N Applications

Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx11NM60N STD11NM60N-STMicroelectronics-datasheet-13721336.pdf STD11NM60N-STMicroelectronics-datasheet-109809.pdf STD11NM60N-STMicroelectronics-datasheet-120764.pdf STD11NM60N-STMicroelectronics-datasheet-11767906.pdf STD11NM60N-STMicroelectronics-datasheet-12550305.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.