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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STB20NM60-1 STMicroelectronics

    STB20NM60-1 [STMicroelectronics]

    STB20NM60-1
    STB20NM60-1

    Part No:

    STB20NM60-1

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 290m ? @ 10A, 10V ±30V 1500pF @ 25V 54nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

    RoHS Status:

    Product FAQ

    1. Is STB20NM60-1 available for RFQ?

    Yes. STB20NM60-1 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STB20NM60-1?

    Pricing for STB20NM60-1 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STB20NM60-1?

    STB20NM60-1 is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 20A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STB20NM60-1?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STB20NM60-1 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STB20NM60-1?

    Yes. If STB20NM60-1 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STB20NM60-1

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    ECCN Code
    EAR99
    Voltage - Rated DC
    600V
    Technology
    MOSFET (Metal Oxide)
    Reach Compliance Code
    not_compliant
    Current Rating
    20A
    Base Part Number
    STB20N
    Pin Count
    3
    Number of Elements
    1
    Power Dissipation-Max
    192W Tc
    Element Configuration
    Single
    Power Dissipation
    192W
    FET Type
    N-Channel
    Input Capacitance (Ciss) (Max) @ Vds
    1500pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    20A Tc
    Gate Charge (Qg) (Max) @ Vgs
    54nC @ 10V
    Rise Time
    20ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Fall Time (Typ)
    11 ns
    Turn-Off Delay Time
    42 ns
    Continuous Drain Current (ID)
    20A
    Gate to Source Voltage (Vgs)
    30V
    Drain to Source Breakdown Voltage
    600V
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    STB20NM60-1 Overview


    A device's maximal input capacitance is 1500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

    STB20NM60-1 Features


    a continuous drain current (ID) of 20A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 42 ns


    STB20NM60-1 Applications


    There are a lot of STMicroelectronics
    STB20NM60-1 applications of single MOSFETs transistors.


    • Consumer Appliances
    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples

    Documents

    Datasheets:

    STx20NM60(-1,FP)
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method
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