STB70N10F4 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 120 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5800pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 65A.Peak drain current for this device is 260A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

STB70N10F4 Features

the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 65A
based on its rated peak drain current 260A.
a 100V drain to source voltage (Vdss)

STB70N10F4 Applications

There are a lot of STMicroelectronics
STB70N10F4 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification