STB20NM60D [STMicroelectronics]

STB20NM60D Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.As far as peak drain current is concerned, its maximum pulsed current is 80A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STB20NM60D Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
based on its rated peak drain current 80A.

STB20NM60D Applications

There are a lot of STMicroelectronics
STB20NM60D applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies