Name: STB100N6F7
Brand: STMicroelectronics
SKU: STB100N6F7

STB100N6F7 [STMicroelectronics]

Part No:

STB100N6F7

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 5.6m ? @ 50A, 10V ±20V 1980pF @ 25V 30nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

22 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STB100N

Power Dissipation-Max

125W Tc

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

1980pF @ 25V

Current - Continuous Drain (Id) @ 25°C

100A Tc

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Drain to Source Voltage (Vdss)

60V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Continuous Drain Current (ID)

100A

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB100N6F7 Description

STB100N6F7 is an N-channel power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. With an improved trench gate structure and STripFETTM F7 technology, this N-channel Power MOSFET has an extremely low onstate resistance and lower internal capacitance and gate charge for quicker and more effective switching.