ESM3030DV [STMicroelectronics]

ESM3030DV Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 85A 5V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 2.4A, 85A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100A.A maximum collector current of 100A volts can be achieved.

ESM3030DV Features

the DC current gain for this device is 300 @ 85A 5V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.5V @ 2.4A, 85A
the emitter base voltage is kept at 7V
the current rating of this device is 100A

ESM3030DV Applications

There are a lot of STMicroelectronics
ESM3030DV applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting