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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. MD2009DFP STMicroelectronics

    MD2009DFP [STMicroelectronics]

    MD2009DFP
    MD2009DFP

    Part No:

    MD2009DFP

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    NPN 150°C TJ 200?A 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

    RoHS Status:

    Product FAQ

    1. Is MD2009DFP available for RFQ?

    Yes. MD2009DFP by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for MD2009DFP?

    Pricing for MD2009DFP can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of MD2009DFP?

    MD2009DFP is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A 5V and Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for MD2009DFP?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can MD2009DFP be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to MD2009DFP?

    Yes. If MD2009DFP is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    MD2009DFP

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-220-3 Full Pack
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Pbfree Code
    yes
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    Terminal Finish
    Matte Tin (Sn) - annealed
    Additional Feature
    UL RECOGNIZED
    Max Power Dissipation
    40W
    Terminal Position
    SINGLE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Reach Compliance Code
    not_compliant
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Base Part Number
    MD2009
    Pin Count
    3
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
    Power Dissipation
    40W
    Case Connection
    ISOLATED
    Transistor Application
    SWITCHING
    Polarity/Channel Type
    NPN
    Transistor Type
    NPN
    Collector Emitter Voltage (VCEO)
    700V
    Max Collector Current
    10A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5.5A 5V
    JEDEC-95 Code
    TO-220AB
    Vce Saturation (Max) @ Ib, Ic
    2.8V @ 1.4A, 5.5A
    Collector Emitter Breakdown Voltage
    700V
    Emitter Base Voltage (VEBO)
    7V
    hFE Min
    5
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    MD2009DFP Overview


    The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 5 @ 5.5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.8V @ 1.4A, 5.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.

    MD2009DFP Features


    the DC current gain for this device is 5 @ 5.5A 5V
    the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
    the emitter base voltage is kept at 7V


    MD2009DFP Applications


    There are a lot of STMicroelectronics
    MD2009DFP applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    MD2009DFP
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
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