STD4NS25T4 [STMicroelectronics]

STD4NS25T4 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 355pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.4A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STD4NS25T4 Features

a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 12 ns
a threshold voltage of 3V

STD4NS25T4 Applications

There are a lot of STMicroelectronics
STD4NS25T4 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification