SGSD100 [STMicroelectronics]

SGSD100 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 500 @ 10A 3V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.When VCE saturation is 3.5V @ 80mA, 20A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 3.3V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.A maximum collector current of 25A volts can be achieved.

SGSD100 Features

the DC current gain for this device is 500 @ 10A 3V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 3.5V @ 80mA, 20A
the emitter base voltage is kept at 3.3V
the current rating of this device is 25A

SGSD100 Applications

There are a lot of STMicroelectronics
SGSD100 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting