Name: STP10P6F6
Brand: STMicroelectronics
SKU: STP10P6F6

STP10P6F6 [STMicroelectronics]

Part No:

STP10P6F6

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) P-Channel Tube 160m ? @ 5A, 10V ±20V 340pF @ 48V 6.4nC @ 10V TO-220-3

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

20 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Operating Temperature

175°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Base Part Number

STP10

JESD-30 Code

R-PSFM-T3

Number of Elements

1

Power Dissipation-Max

30W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

35W

Case Connection

DRAIN

FET Type

P-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 48V

Current - Continuous Drain (Id) @ 25°C

10A Tc

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Rise Time

7ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

10 ns

Turn-Off Delay Time

16.5 ns

Continuous Drain Current (ID)

10A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Pulsed Drain Current-Max (IDM)

40A

Avalanche Energy Rating (Eas)

80 mJ

RoHS Status

RoHS Compliant

Products Detail

STP10P6F6 Description

STP10P6F6 is a -60v P-channel STripFET? F6 Power MOSFET. The STP10P6F6 is a P-channel Power MOSFET developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFET STP10P6F6 exhibits very low RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 175?. And the Transistor STP10P6F6 is in the TO-220-3 package with 35W power dissipation.