STB100NH02LT4 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 600 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2850pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 60A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 24V, and this device has a drainage-to-source breakdown voltage of 24VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 240A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

STB100NH02LT4 Features

the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 240A.

STB100NH02LT4 Applications

There are a lot of STMicroelectronics
STB100NH02LT4 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies