Name: STB100N10F7
Brand: STMicroelectronics
SKU: STB100N10F7

STB100N10F7 [STMicroelectronics]

Part No:

STB100N10F7

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 40A, 10V ±20V 4369pF @ 50V 61nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Factory Lead Time

38 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Weight

3.949996g

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Technology

MOSFET (Metal Oxide)

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STB100N

Number of Elements

Number of Channels

Power Dissipation-Max

150W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

27 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

4369pF @ 50V

Current - Continuous Drain (Id) @ 25°C

80A Tc

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Rise Time

40ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

15 ns

Turn-Off Delay Time

46 ns

Continuous Drain Current (ID)

80A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.008Ohm

Drain to Source Breakdown Voltage

100V

Avalanche Energy Rating (Eas)

400 mJ

Height

4.6mm

Length

10.4mm

Width

9.35mm

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB100N10F7 Description

STB100N10F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 100V. These STripFETTM F7-enabled N-channel Power MOSFETs have an improved trench gate structure that results in very low on-state resistance while also lowering internal capacitance and gate charge for quicker and more effective switching.

STB100N10F7 Features

Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness

STB100N10F7 Applications

Power Management
Consumer Electronics
Portable Devices
Industrial

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx100N10F7 DataSheet STB100N10F7-STMicroelectronics-datasheet-62335087.pdf STB100N10F7-STMicroelectronics-datasheet-14220842.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.