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MT60B4G4HB-48B:A
Micron
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The STB14NM50N is an MDmesh? II N-channel Power MOSFET developed using the second generation of MDmesh? technology. The STMicroelectronics STB14NM50N associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
In the TO-263 package
power dissipation: 90W
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
No key features available
No application scenarios available
No documents available
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
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