Part No:
BD678
Category:
Transistors
Description:
PNP power Darlington transistor
Package:
-
Production Status:
In Stock Status:
Specification
Collector Current-Max (IC)
Collector-Emitter Voltage-Max
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)
Operating Temperature-Max
Peak Reflow Temperature (Cel)
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
Transition Frequency-Nom (fT)
Products Detail
BD678 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD678 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD678 Applications
There are a lot of STMicroelectronics
BD678 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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