BUL39D [STMicroelectronics]

BUL39D Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.1V @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 4A volts.

BUL39D Features

the DC current gain for this device is 10 @ 10mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 4A

BUL39D Applications

There are a lot of STMicroelectronics
BUL39D applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting