Name: STD10P10F6
Brand: STMicroelectronics
SKU: STD10P10F6

STD10P10F6 [STMicroelectronics]

Part No:

STD10P10F6

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

RoHS Status

RoHS Compliant

Part Life Cycle Code

Active

Package Description

DPAK-3/2

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

26 Weeks

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (ID)

10 A

Drain-source On Resistance-Max

0.18 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-252

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

P-CHANNEL

Pulsed Drain Current-Max (IDM)

40 A

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Products Detail

STD10P10F6 Description

STD10P10F6 is a 100v P-channel Power MOSFET. The STMicroelectronics STD10P10F6 is developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET STD10P10F6 exhibits very low RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 175?. And the Transistor STD10P10F6 is in the TO-252-3 package with 40W power dissipation.