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K4RAH165VB-BIWM
SAMSUNG
Part number
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STW30NM60D is 600v N-channel Fast diode MDmesh? Power MOSFET. The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, particularly ZVS phase-shift converters. The operating junction and storage temperature are between -55 and 150?. The MOSFET STW30NM60D is in the TO-247 package with 312W power dissipation.
High dv/dt and avalanche capabilities
100% avalanche rated
Low input capacitance and gate charge
Low gate input resistance
Fast internal recovery diode
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
No key features available
No application scenarios available
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
K4RAH165VB-BIWM
SAMSUNG
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