MJB44H11T4 [STMicroelectronics]

MJB44H11T4 Overview

In this device, the DC current gain is 40 @ 4A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 400mA, 8A.A 10A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

MJB44H11T4 Features

the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V

MJB44H11T4 Applications

There are a lot of STMicroelectronics
MJB44H11T4 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting