Name: SCTW35N65G2V
Brand: STMicroelectronics
SKU: SCTW35N65G2V

SCTW35N65G2V [STMicroelectronics]

Part No:

SCTW35N65G2V

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

SiCFET (Silicon Carbide) N-Channel 67m ? @ 20A, 20V +22V, -10V 1370pF @ 400V 73nC @ 20V 650V TO-247-3

Package:

-

RoHS Status:

Datasheet:

-

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Mounting Type

Through Hole

Package / Case

TO-247-3

Operating Temperature

-55°C~200°C TJ

Series

Automotive, AEC-Q101

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Technology

SiCFET (Silicon Carbide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Power Dissipation-Max

240W Tc

FET Type

N-Channel

Vgs(th) (Max) @ Id

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 400V

Current - Continuous Drain (Id) @ 25°C

45A Tc

Gate Charge (Qg) (Max) @ Vgs

73nC @ 20V

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On,Min Rds On)

18V 20V

Vgs (Max)

+22V, -10V

RoHS Status

RoHS Compliant

Products Detail

SCTW35N65G2V Description

This silicon carbide power MOSFET device is developed using advanced and innovative second generation silicon carbide MOSFET technology from STMicroelectronics. The device has extremely low on-resistance per unit area and very good switching performance. The change of switching loss has almost nothing to do with the junction temperature.