STD100NH02LT4 [STMicroelectronics]

STD100NH02LT4 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 800 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3940pF @ 15V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.Using VGS=24V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 24V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

STD100NH02LT4 Features

the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 240A.

STD100NH02LT4 Applications

There are a lot of STMicroelectronics
STD100NH02LT4 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching