Part No:
ESM4045DV
Category:
Transistors
Description:
NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount
Package:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Configuration
DARLINGTON WITH BUILT-IN DIODE
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Emitter Base Voltage (VEBO)
Products Detail
ESM4045DV Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 220 @ 35A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.4V @ 2A, 35A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 42A.Collector current can be as low as 42A volts at its maximum.
ESM4045DV Features
the DC current gain for this device is 220 @ 35A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 1.4V @ 2A, 35A
the emitter base voltage is kept at 7V
the current rating of this device is 42A
ESM4045DV Applications
There are a lot of STMicroelectronics
ESM4045DV applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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