Part No:
BCY59VIII
Category:
Transistors
Description:
NPN 175°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
Package:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-206AA, TO-18-3 Metal Can
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Products Detail
BCY59VIII Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 2.5mA, 100mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
BCY59VIII Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 700mV @ 2.5mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 100MHz
BCY59VIII Applications
There are a lot of STMicroelectronics
BCY59VIII applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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