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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. SCT10N120 STMicroelectronics

    SCT10N120 [STMicroelectronics]

    SCT10N120
    SCT10N120

    Part No:

    SCT10N120

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

    RoHS Status:

    Product FAQ

    1. Is SCT10N120 available for RFQ?

    Yes. SCT10N120 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for SCT10N120?

    Pricing for SCT10N120 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of SCT10N120?

    SCT10N120 is a STMicroelectronics Transistors with Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED and Drain-source On Resistance-Max: 0.69 Ω. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for SCT10N120?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can SCT10N120 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to SCT10N120?

    Yes. If SCT10N120 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    SCT10N120

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    RoHS Status
    RoHS Compliant
    Part Life Cycle Code
    Active
    Manufacturer Package Code
    HiP247 IN LINE
    Reach Compliance Code
    compliant
    ECCN Code
    EAR99
    Factory Lead Time
    32 Weeks
    Case Connection
    DRAIN
    Configuration
    SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min
    1200 V
    Drain Current-Max (ID)
    12 A
    Drain-source On Resistance-Max
    0.69 Ω
    FET Technology
    METAL-OXIDE SEMICONDUCTOR
    Feedback Cap-Max (Crss)
    9 pF
    JESD-30 Code
    R-PSFM-T3
    Number of Elements
    1
    Number of Terminals
    3
    Operating Mode
    ENHANCEMENT MODE
    Operating Temperature-Max
    200 °C
    Operating Temperature-Min
    -55 °C
    Package Body Material
    PLASTIC/EPOXY
    Package Shape
    RECTANGULAR
    Package Style
    FLANGE MOUNT
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Polarity/Channel Type
    N-CHANNEL
    Power Dissipation-Max (Abs)
    150 W
    Pulsed Drain Current-Max (IDM)
    24 A
    Surface Mount
    NO
    Terminal Form
    THROUGH-HOLE
    Terminal Position
    SINGLE
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Transistor Application
    SWITCHING
    Transistor Element Material
    SILICON CARBIDE

    Products Detail

    SCT10N120 Description


    This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device??s housing in the proprietary HiP247? package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.



    SCT10N120 Features


    • Very tight variation of on-resistance vs. temperature

    • Very high operating junction temperature capability (TJ = 200 ??C)

    • Very fast and robust intrinsic body diode

    • Low capacitance



    SCT10N120 Applications


    • Solar inverters, UPS

    • Motor drives

    • High voltage DC-DC converters

    • Switch mode power supplies


    Documents

    Datasheets:

    SCT10N120 Datasheet
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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