SCT10N120 [STMicroelectronics]

Name: SCT10N120
Brand: STMicroelectronics
SKU: SCT10N120

Part No:

SCT10N120

Transistors

Manufacturer:

STMicroelectronics

Description:

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

RoHS Status

RoHS Compliant

Part Life Cycle Code

Active

Manufacturer Package Code

HiP247 IN LINE

Reach Compliance Code

compliant

ECCN Code

EAR99

Factory Lead Time

32 Weeks

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

1200 V

Drain Current-Max (ID)

12 A

Drain-source On Resistance-Max

0.69 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

9 pF

JESD-30 Code

R-PSFM-T3

Number of Elements

Number of Terminals

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

200 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

150 W

Pulsed Drain Current-Max (IDM)

24 A

Surface Mount

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON CARBIDE

Products Detail

SCT10N120 Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device??s housing in the proprietary HiP247? package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

SCT10N120 Features

Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200 ??C)
Very fast and robust intrinsic body diode
Low capacitance

SCT10N120 Applications

Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supplies

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

SCT10N120 Datasheet

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.