STB30NM60ND [STMicroelectronics]

STB30NM60ND Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2800pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12.5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [25A] according to its drain current.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STB30NM60ND Features

the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 12.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns

STB30NM60ND Applications

There are a lot of STMicroelectronics
STB30NM60ND applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies