STB85NS04Z Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 550 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2500pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=33V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 33V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 60A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 18V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STB85NS04Z Features

the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 33V voltage

STB85NS04Z Applications

There are a lot of STMicroelectronics
STB85NS04Z applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching