Part No:
STD10NM50N
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 630m ? @ 3.5A, 10V ±25V 450pF @ 50V 17nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
Package:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
Moisture Sensitivity Level (MSL)
Terminal Finish
Matte Tin (Sn) - annealed
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Configuration
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain Current-Max (Abs) (ID)
Pulsed Drain Current-Max (IDM)
Products Detail
STD10NM50N Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 450pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 7A.As a result of its turn-off delay time, which is 7.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 28A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
STD10NM50N Features
a continuous drain current (ID) of 7A
the turn-off delay time is 7.8 ns
based on its rated peak drain current 28A.
a threshold voltage of 3V
a 500V drain to source voltage (Vdss)
STD10NM50N Applications
There are a lot of STMicroelectronics
STD10NM50N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
Key Features
No key features available
Application scenarios
No application scenarios available
Documents