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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STD10NM50N STMicroelectronics
    Product FAQ

    1. Is STD10NM50N available for RFQ?

    Yes. STD10NM50N by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD10NM50N?

    Pricing for STD10NM50N can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD10NM50N?

    STD10NM50N is a STMicroelectronics Transistors with Packaging: Tape & Reel (TR) and Current - Continuous Drain (Id) @ 25°C: 7A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD10NM50N?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD10NM50N be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD10NM50N?

    Yes. If STD10NM50N is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD10NM50N

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    STD10NM50N [STMicroelectronics]

    STD10NM50N
    STD10NM50N

    Part No:

    STD10NM50N

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 630m ? @ 3.5A, 10V ±25V 450pF @ 50V 17nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

    RoHS Status:

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Surface Mount
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tape & Reel (TR)
    JESD-609 Code
    e3
    Pbfree Code
    yes
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)

    Products Detail

    STD10NM50N Overview


    CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 450pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 7A.As a result of its turn-off delay time, which is 7.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 28A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

    STD10NM50N Features


    a continuous drain current (ID) of 7A
    the turn-off delay time is 7.8 ns
    based on its rated peak drain current 28A.
    a threshold voltage of 3V
    a 500V drain to source voltage (Vdss)


    STD10NM50N Applications


    There are a lot of STMicroelectronics
    STD10NM50N applications of single MOSFETs transistors.


    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies
    • PFC stages, hard switching PWM stages and resonant switching
    • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
    • Lighting, Server, Telecom and UPS.

    Documents

    Datasheets:

    STx10NM50N
    Featured Product
    Number of Terminations
    2
    ECCN Code
    EAR99
    Resistance
    630mOhm
    Terminal Finish
    Matte Tin (Sn) - annealed
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    SINGLE
    Terminal Form
    GULL WING
    Peak Reflow Temperature (Cel)
    260
    Time@Peak Reflow Temperature-Max (s)
    30
    Base Part Number
    STD10
    Pin Count
    3
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    70W Tc
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    70W
    Turn On Delay Time
    7.8 ns
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    450pF @ 50V
    Current - Continuous Drain (Id) @ 25°C
    7A Tc
    Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
    Rise Time
    4.4ns
    Drain to Source Voltage (Vdss)
    500V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Fall Time (Typ)
    12 ns
    Turn-Off Delay Time
    7.8 ns
    Continuous Drain Current (ID)
    7A
    Threshold Voltage
    3V
    Gate to Source Voltage (Vgs)
    25V
    Drain Current-Max (Abs) (ID)
    7A
    Pulsed Drain Current-Max (IDM)
    28A
    DS Breakdown Voltage-Min
    500V
    Height
    2.4mm
    Length
    6.6mm
    Width
    6.2mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free
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