Name: STB26NM60N
Brand: STMicroelectronics
SKU: STB26NM60N

STB26NM60N [STMicroelectronics]

Part No:

STB26NM60N

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 165m ? @ 10A, 10V ±30V 1800pF @ 50V 60nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

26 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Manufacturer Package Identifier

D2PAK-0079457

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

165MOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB26N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Number of Channels

Power Dissipation-Max

140W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

140W

Turn On Delay Time

13 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 50V

Current - Continuous Drain (Id) @ 25°C

20A Tc

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Rise Time

25ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

50 ns

Turn-Off Delay Time

85 ns

Continuous Drain Current (ID)

20A

Threshold Voltage

Gate to Source Voltage (Vgs)

30V

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

80A

Max Junction Temperature (Tj)

150°C

Height

4.83mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

Description

The STB26NM60N is a D2PAK and TO-220 package N-channel 600 V, 0.135 typ., 20 A MDmeshTM II Power MOSFET. These N-channel Power MOSFETs were created using MDmesh^TM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charges in the world. As a result, it is well suited to the most demanding high-efficiency converters.

Features

? 100% avalanche tested

? Low gate input resistance

? Low input capacitance and gate charge

? Increase efficiency, power density, and cost-effectiveness

? Make automotive applications more compact and higher performing

Applications

? Switching applications

? Industrial

? Automotive applications

? The motor and a DC source

? Circuit

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STB,F,P26NM60N STB26NM60N-STMicroelectronics-datasheet-11840057.pdf STB26NM60N-STMicroelectronics-datasheet-10390452.pdf STB26NM60N-STMicroelectronics-datasheet-21828427.pdf STB26NM60N-STMicroelectronics-datasheet-14060361.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.