Name: STB23NM60ND
Brand: STMicroelectronics
SKU: STB23NM60ND

STB23NM60ND [STMicroelectronics]

Part No:

STB23NM60ND

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 180m ? @ 10A, 10V ±25V 2050pF @ 50V 70nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Base Part Number

STB23N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

150W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

150W

Turn On Delay Time

21 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 50V

Current - Continuous Drain (Id) @ 25°C

19.5A Tc

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Rise Time

45ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

40 ns

Turn-Off Delay Time

90 ns

Continuous Drain Current (ID)

10A

Threshold Voltage

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

78A

Avalanche Energy Rating (Eas)

700 mJ

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB23NM60ND Description

STB23NM60ND belongs to the family of N-channel FDmesh? II power MOSFETs with intrinsic fast-recovery body diode. It is manufactured by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for bridge topologies and ZVS phase-shift converters.

STB23NM60ND Features

Low on-state resistance
Low gate input resistance
Low input capacitance and gate charge
High dv/dt and avalanche capabilities
Available in the D2PAK package

STB23NM60ND Applications

Bridge topologies
ZVS phase-shift converters

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STB23NM60ND-STMicroelectronics-datasheet-10541577.pdf STB23NM60ND-STMicroelectronics-datasheet-12522085.pdf STB23NM60ND-STMicroelectronics-datasheet-62335171.pdf STB23NM60ND-STMicroelectronics-datasheet-8327030.pdf STB23NM60ND-STMicroelectronics-datasheet-14062187.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

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