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K4FBE3D4HM-THCL
SAMSUNG
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The STB120N4F6 is an Automotive-grade N-channel 40 V, 3.5 m? typ., 80 A STripFET? F6 Power MOSFETs in DPAK and D2PAK packages. These products are N-channel Power MOSFETs made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFETs that are produced have the lowest RDS(on) among all packages. The STB120N4F6 product uses the latest gate structure and ST's patented STripFET? DeepGATE? technology's 6th generation of design rules. The Power MOSFET that results has the lowest RDS(on) among all packages.
High avalanche ruggedness
Low gate drive power loss
Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance
Very low gate charge
Switching applications
Automotive
Small motor control
Solar inverters
Automotive applications
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Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
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