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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. STD12N60M2 STMicroelectronics

    STD12N60M2 [STMicroelectronics]

    STD12N60M2
    STD12N60M2

    Part No:

    STD12N60M2

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 450m ? @ 4.5A, 10V ±25V 538pF @ 100V 16nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

    RoHS Status:

    Product FAQ

    1. Is STD12N60M2 available for RFQ?

    Yes. STD12N60M2 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STD12N60M2?

    Pricing for STD12N60M2 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STD12N60M2?

    STD12N60M2 is a STMicroelectronics Transistors with Packaging: Cut Tape (CT) and Current - Continuous Drain (Id) @ 25°C: 9A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STD12N60M2?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STD12N60M2 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STD12N60M2?

    Yes. If STD12N60M2 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STD12N60M2

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
    Factory Lead Time
    16 Weeks
    Mounting Type
    Surface Mount
    Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
    Surface Mount
    YES
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Cut Tape (CT)
    Part Status
    Active
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    2
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    SINGLE
    Terminal Form
    THROUGH-HOLE
    Base Part Number
    STD12
    JESD-30 Code
    R-PSSO-G2
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    85W Tc
    Operating Mode
    ENHANCEMENT MODE
    Case Connection
    DRAIN
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    538pF @ 100V
    Current - Continuous Drain (Id) @ 25°C
    9A Tc
    Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
    Drain to Source Voltage (Vdss)
    600V
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±25V
    Drain Current-Max (Abs) (ID)
    9A
    Drain-source On Resistance-Max
    0.45Ohm
    Pulsed Drain Current-Max (IDM)
    36A
    DS Breakdown Voltage-Min
    600V
    Avalanche Energy Rating (Eas)
    117 mJ
    RoHS Status
    RoHS Compliant

    Products Detail

    STD12N60M2 Overview


    As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 117 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 538pF @ 100V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.There is a peak drain current of 36A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

    STD12N60M2 Features


    the avalanche energy rating (Eas) is 117 mJ
    based on its rated peak drain current 36A.
    a 600V drain to source voltage (Vdss)


    STD12N60M2 Applications


    There are a lot of STMicroelectronics
    STD12N60M2 applications of single MOSFETs transistors.


    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
    • Battery Protection Circuit
    • Telecom 1 Sever Power Supplies
    • Industrial Power Supplies
    • PFC stages, hard switching PWM stages and resonant switching
    • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
    • Lighting, Server, Telecom and UPS.
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
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    • Secure payment method
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