BUB941ZT [STMicroelectronics]

BUB941ZT Overview

In this device, the DC current gain is 300 @ 5A 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 250mA, 10A.A 15A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

BUB941ZT Features

the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V

BUB941ZT Applications

There are a lot of STMicroelectronics
BUB941ZT applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting