Name: STB23NM50N
Brand: STMicroelectronics
SKU: STB23NM50N

STB23NM50N [STMicroelectronics]

Part No:

STB23NM50N

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 190m ? @ 8.5A, 10V ±25V 1330pF @ 50V 45nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

26 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

190mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB23N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

125W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

125W

Turn On Delay Time

6.6 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 50V

Current - Continuous Drain (Id) @ 25°C

17A Tc

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Rise Time

19ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

29 ns

Turn-Off Delay Time

71 ns

Continuous Drain Current (ID)

17A

Threshold Voltage

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

500V

Pulsed Drain Current-Max (IDM)

68A

Avalanche Energy Rating (Eas)

254 mJ

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB23NM50N Description

STB23NM50N MOSFET is N-channel Power MOSFET based on the well-known PowerMESH horizontal layout. STB23NM50N N-channel MOSFET offers extremely low on-resistance. STB23NM50N STMicroelectronics is particularly suitable for applications requiring high power and superior efficiency.

STB23NM50N Features

Extremely low RDS(on)

Low gate charge and input resistance

Excellent switching performance

100% avalanche tested

STB23NM50N Applications

High Side Driver

Switching power supplies

Low Side Driver

Power switches

Reverser Battery protection

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx23NM50N STB23NM50N-STMicroelectronics-datasheet-28966285.pdf STB23NM50N-STMicroelectronics-datasheet-14060970.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.