STD100N10LF7AG [STMicroelectronics]

STD100N10LF7AG Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 80A.Pulsed drain current is maximum rated peak drain current 320A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

STD100N10LF7AG Features

the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 320A.
a 100V drain to source voltage (Vdss)

STD100N10LF7AG Applications

There are a lot of STMicroelectronics
STD100N10LF7AG applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching