Name: STP12NK60Z
Brand: STMicroelectronics
SKU: STP12NK60Z

STP12NK60Z [STMicroelectronics]

Part No:

STP12NK60Z

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 640m ? @ 5A, 10V ±30V 1740pF @ 25V 59nC @ 10V TO-220-3

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tube

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

Termination

Through Hole

Terminal Finish

Tin (Sn)

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC

600V

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Current Rating

10A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STP12

Pin Count

Qualification Status

Not Qualified

Number of Elements

Power Dissipation-Max

150W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

150W

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1740pF @ 25V

Current - Continuous Drain (Id) @ 25°C

10A Tc

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Rise Time

18.5ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

31.5 ns

Turn-Off Delay Time

55 ns

Continuous Drain Current (ID)

10A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

30V

Drain-source On Resistance-Max

0.64Ohm

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

40A

Dual Supply Voltage

600V

Avalanche Energy Rating (Eas)

260 mJ

Nominal Vgs

3.75 V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STP12NK60Z Description

STP12NK60Z is a 650v N-channel Zener-protected SuperMESH? Power MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST??s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, specialties are taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST's full range of high voltage Power MOSFETs.

STP12NK60Z Features

Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability

STP12NK60Z Applications

Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx12NK60Z

RFQ

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Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.