Name: STB28N65M2
Brand: STMicroelectronics
SKU: STB28N65M2

STB28N65M2 [STMicroelectronics]

Part No:

STB28N65M2

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 180m ? @ 10A, 10V ±25V 1440pF @ 100V 35nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

26 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

HTS Code

8541.29.00.95

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STB28N

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

170W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

13.4 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 100V

Current - Continuous Drain (Id) @ 25°C

20A Tc

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Turn-Off Delay Time

59 ns

Continuous Drain Current (ID)

20A

Gate to Source Voltage (Vgs)

25V

Drain-source On Resistance-Max

0.18Ohm

Pulsed Drain Current-Max (IDM)

80A

DS Breakdown Voltage-Min

650V

Avalanche Energy Rating (Eas)

760 mJ

Height

4.6mm

Length

10.4mm

Width

9.35mm

RoHS Status

RoHS Compliant

Products Detail

STB28N65M2 Description

The STB28N65M2 is an N-channel Power MOSFET made with MDmeshTM M2 technology. The devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high efficiency converters.

STB28N65M2 Features

Zener-protected
100% avalanche tested
Extremely low gate charge
Excellent output capacitance (Coss) profile

STB28N65M2 Applications

Switching applications

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STx28N65M2 STB28N65M2-STMicroelectronics-datasheet-36780002.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.