
GD32F407ZGT6
GD

MDmeshTM K5 technology is used to create this very high voltage N-channel Power MOSFET, which is based on a unique proprietary vertical structure. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.
RDS(on) x region with the lowest RDS(on) in the industry
The best figure of merit (FoM) in the industry
The gate charge is really inexpensive.
Avalanche-proofed to the nth degree
Zener-protected
Synchronous Rectification on the Primary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
? Converting Boost
No key features available
No application scenarios available
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Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
IMPORTANT NOTICE
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GD32F407ZGT6
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