Name: STB18N65M5
Brand: STMicroelectronics
SKU: STB18N65M5

STB18N65M5 [STMicroelectronics]

Part No:

STB18N65M5

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 220m ? @ 7.5A, 10V ±25V 1240pF @ 100V 31nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

17 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

220mOhm

Terminal Finish

Matte Tin (Sn)

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Base Part Number

STB18N

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Power Dissipation-Max

110W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

110W

Case Connection

DRAIN

Turn On Delay Time

36 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1240pF @ 100V

Current - Continuous Drain (Id) @ 25°C

15A Tc

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Rise Time

7ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

9 ns

Turn-Off Delay Time

9 ns

Continuous Drain Current (ID)

15A

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

650V

Pulsed Drain Current-Max (IDM)

60A

Height

4.6mm

Length

10.4mm

Width

9.35mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB18N65M5 Description

STB18N65M5 N-channel MOSFET is N-channel Power MOSFET based on the well-known PowerMESH horizontal layout. STB18N65M5 MOSFET offers extremely low on-resistance. STB18N65M5 STMicroelectronics is particularly suitable for applications requiring high power and superior efficiency.