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MT60B2G8HB-48B:A
Micron
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The N-channel power MOSFET adopts STripFET F7 technology and has an enhanced groove gate structure, which can not only achieve extremely low on-resistance, but also reduce internal capacitance and gate charge to achieve faster and more efficient switches.
· Among the lowest RDS(on) on the market
· Excellent FoM (figure of merit)
· Low Crss/Ciss ratio for EMI immunity
· High avalanche ruggedness
· Switching applications
No key features available
No application scenarios available
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
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